A superconducting switch actuated by injection of high energy electrons
M. F. Ritter, A. Fuhrer, D. Z. Haxell, S. Hart, P. Gumann, H. Riel, F. Nichele
arXiv:2005.00462 · DOI 10.1038/s41467-021-21231-2 · 2020-05-01 · Nature Communications
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Abstract
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.7 | Pressure not reported | unknown |
| Ti Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.22 | Pressure not reported | unknown |
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