Hybridization mechanism of the dual proximity effect in superconductor-topological insulator interfaces

Nicholas Sedlmayr; Alex Levchenko

doi:10.1016/J.SSC.2021.114221

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Hybridization mechanism of the dual proximity effect in superconductor-topological insulator interfaces

Nicholas Sedlmayr, Alex Levchenko

arXiv:2010.14066 · DOI 10.1016/J.SSC.2021.114221 · 2020-10-27 · Solid State Communications

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Abstract

In this communication we consider generalities of the proximity effect in a contact between a conventional $s$-wave superconductor (S) nano-island and a thin film of a topological insulator (TI). A local hybridization coupling mechanism is considered and a corresponding model is corroborated that captures not only the induced unconventional superconductivity in a TI, but also predicts the spreading of topologically protected surface states into the superconducting over-layer. This dual nature of the proximity effect leads specifically to a modified description of topological superconductivity in these systems. Experimentally accessible signatures of this phenomenon are discussed in the context of scanning tunneling microscopy measurements. For this purpose an effective density of states is computed in both the superconductor and topological insulator. As a guiding example, practical applications are made for Nb islands deposited on a surface of Bi$_2$Se$_3$. The obtained results are general and can be applied beyond the particular material system used. Possible implications of these results to proximity circuits and hybrid hardware devices for quantum computation processing are discussed.