Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

L. Riney; C. Bunker; S. -K. Bac; J. Wang; D. Battaglia; Yun Chang Park; M. Dobrowolska; J. K. Furdyna; X. Liu; B. A. Assaf

doi:10.1063/5.0039761

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

L. Riney, C. Bunker, S. -K. Bac, J. Wang, D. Battaglia, Yun Chang Park, M. Dobrowolska, J. K. Furdyna, X. Liu, B. A. Assaf

arXiv:2011.12755 · DOI 10.1063/5.0039761 · 2020-11-25 · arXiv: Materials Science

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Abstract

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3.