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Hole-Doped Room-Temperature Superconductivity in H$_{3}$S$_{1-x}$Z$_x$ (Z=C, Si)

Yanfeng Ge, Fan Zhang, Ranga P. Dias, Russell J. Hemley, Yugui Yao

arXiv:2011.12891 · DOI 10.1016/j.mtphys.2020.100330 · 2020-11-25 · arXiv: Superconductivity

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Abstract

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H$_3$S$_{0.962}$C$_{0.038}$ at 260 GPa and H$_3$S$_{0.960}$Si$_{0.040}$ at 230 GPa. The former may provide an explanation for the recent experimental observation of room-temperature superconductivity in a highly compressed C-S-H system [Nature 586, 373-377 (2020)]. Our work opens a new avenue for substantially raising the critical temperatures of hydrogen-rich materials.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
H3S0.962C0.038

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289260 GPaunknown
H3S0.960Si0.040

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283230 GPaunknown
H3S

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203150 GPaunknown
H3S

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180Pressure not reportedunknown
H3S0.927P0.075

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280250 GPaunknown
LaH10

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255177.5 GPaunknown
H3S0.960C0.040

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—250 GPaunknown
H3S0.960C0.040

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—280 GPaunknown

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