Charge density waves and Fermi level pinning in monolayer and bilayer SnSe$_2$
Shu-Ze Wang, Yi-Min Zhang, Jia-Qi Fan, Ming-Qiang Ren, Can-Li Song, Xu-Cun Ma, Qi-Kun Xue
arXiv:2102.07913 · DOI 10.1103/PhysRevB.102.241408 · 2021-02-16 · Physical Review B
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Abstract
Materials with reduced dimensionality often exhibit exceptional properties that are different from their bulk counterparts. Here we report the emergence of a commensurate 2 $\times$ 2 charge density wave (CDW) in monolayer and bilayer SnSe$_2$ films by scanning tunneling microscope. The visualized spatial modulation of CDW phase becomes prominent near the Fermi level, which is pinned inside the semiconductor band gap of SnSe$_2$. We show that both CDW and Fermi level pinning are intimately correlated with band bending and virtual induced gap states at the semiconductor heterointerface. Through interface engineering, the electron-density-dependent phase diagram is established in SnSe$_2$. Fermi surface nesting between symmetry inequivalent electron pockets is revealed to drive the CDW formation and to provide an alternative CDW mechanism that might work in other compounds.
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