Nanocrystalline superconducting $γ$-Mo$_2$N ultra-thin films for single-photon detectors

J. A. Hofer; M. Ginzburg; S. Bengio; N. Haberkorn

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Nanocrystalline superconducting $γ$-Mo$_2$N ultra-thin films for single-photon detectors

J. A. Hofer, M. Ginzburg, S. Bengio, N. Haberkorn

arXiv:2106.10781 · 2021-06-21

T1theoretical

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Abstract

We analyze the influence of the surface passivation produced by oxides on the superconducting properties of $γ$-Mo$_2$N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo$_2$N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time $\approx$ 45 ps. This value is promising for its applications in single-photon detectors.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
γ-Mo2N Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	6.4	Pressure not reported	unknown