Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

D. Phan; J. Senior; A. Ghazaryan; M. Hatefipour; W. M. Strickland; J. Shabani; M. Serbyn; A. P. Higginbotham

doi:10.1103/PhysRevLett.128.107701

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Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

D. Phan, J. Senior, A. Ghazaryan, M. Hatefipour, W. M. Strickland, J. Shabani, M. Serbyn, A. P. Higginbotham

arXiv:2107.03695 · DOI 10.1103/PhysRevLett.128.107701 · 2021-07-08 · Physical review letters

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Abstract

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.55	Pressure not reported	unknown
InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.55	Pressure not reported	unknown