Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions

Bassel H. Elfeky; Neda Lotfizadeh; William F. Schiela; William M. Strickland; Matthieu Dartiailh; Kasra Sardashti; Mehdi Hatefipour; Peng Yu; Natalia Pankratova; Hanho Lee; Vladimir E. Manucharyan; Javad Shabani

doi:10.1021/acs.nanolett.1c02771

Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions

Bassel H. Elfeky, Neda Lotfizadeh, William F. Schiela, William M. Strickland, Matthieu Dartiailh, Kasra Sardashti, Mehdi Hatefipour, Peng Yu, Natalia Pankratova, Hanho Lee, Vladimir E. Manucharyan, Javad Shabani

arXiv:2107.08042 · DOI 10.1021/acs.nanolett.1c02771 · 2021-07-16 · Nano letters

T1experimental20 citations

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Abstract

The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefore the overall current distribution could be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five mini-gates. We demonstrate that not only can the junction width be electrostatically defined but also we can locally adjust the current profile to form superconducting quantum interference devices. Our studies show enhanced edge conduction in such long junctions, which can be eliminated by mini-gates to create a uniform current distribution.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown