Semiconductor Epitaxy in Superconducting Templates

M. F. Ritter; H. Schmid; M. Sousa; P. Staudinger; D. Z. Haxell; M. A. Mueed; B. Madon; A. Pushp; H. Riel; F. Nichele

doi:10.1021/acs.nanolett.1c03133

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Semiconductor Epitaxy in Superconducting Templates

M. F. Ritter, H. Schmid, M. Sousa, P. Staudinger, D. Z. Haxell, M. A. Mueed, B. Madon, A. Pushp, H. Riel, F. Nichele

arXiv:2108.05878 · DOI 10.1021/acs.nanolett.1c03133 · 2021-08-12 · Nano Letters

T3experimental3 citations

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Abstract

Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown