Induced superconducting pairing in integer quantum Hall edge states

Mehdi Hatefipour; Joseph J. Cuozzo; Jesse Kanter; William Strickland; Christopher R. Allemang; Tzu-Ming Lu; Enrico Rossi; Javad Shabani

doi:10.1021/acs.nanolett.2c01413

Induced superconducting pairing in integer quantum Hall edge states

Mehdi Hatefipour, Joseph J. Cuozzo, Jesse Kanter, William Strickland, Christopher R. Allemang, Tzu-Ming Lu, Enrico Rossi, Javad Shabani

arXiv:2108.08899 · DOI 10.1021/acs.nanolett.2c01413 · 2021-08-19 · Nano letters

T1experimental48 citations

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Abstract

Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	—