Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+d thin films
Raffy, H., Li, Z. Z., Auban-Senzier, P.
arXiv:2304.05851 · DOI 10.1103/PhysRevB.106.224503 · 2023-04-13
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Abstract
The transport properties, resistance, Hall effect, and low T magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6+d (Bi2201) thin films are reported. From 20 to 300K, the temperature dependence of the resistance is well described by a law of the form a+bT4/3, theoretically predicted to occur in the presence of ferromagnetic fluctuations. In addition, this prediction is reinforced by the analysis of the transverse and the longitudinal low T magnetoresistance. Interestingly, the presence of a weak disorder causing low T electronic localization allows us to evidence very short diffusion lengths, as observed in other systems with ferromagnetic fluctuations.
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