Nonuniversal power law of the Hall scattering rate in a single-layer cuprate Bi2Sr2−xLaxCuO6
Yoichi Ando, T. Murayama
DOI 10.1103/PhysRevB.60.R6991 · Physical Review B
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Abstract
In-plane resistivity, Hall coefficient, and magnetoresistance are measured in a series of high-quality Bi2Sr2−xLaxCuO6 crystals with various carrier concentrations, from underdoped to overdoped. It is found that the temperature dependence of the cotangent of the Hall angle obeys a power law Tα with α systematically decreasing with increasing carriers. While the observed power-law behavior supports the scattering-time separation, the universality of the Fermi-liquid-like T2 dependence of the Hall scattering rate is seriously questioned.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24 | Pressure not reported | zero_resistance |
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 30 | Pressure not reported | zero_resistance |
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 33 | Pressure not reported | zero_resistance |
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 28.5 | Pressure not reported | zero_resistance |
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 20 | Pressure not reported | zero_resistance |
| Bi2Sr2-xLaxCuO6 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 33 | Pressure not reported | onset |
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