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Horizontal flux growth as an efficient preparation method of CeRh$_2$As$_2$ single crystals

Grzegorz Chajewski, Damian Szymański, Marek Daszkiewicz, Dariusz Kaczorowski

arXiv:2401.02372 · DOI 10.1039/D3MH01351K · 2024-01-04 · Materials horizons

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Abstract

We report on the efficient method of obtaining CeRh$_2$As$_2$ single crystals with the use of a bismuth flux growth method in a horizontal configuration. The crystals thus obtained exhibit much sharper phase transitions and distinctly higher characteristic temperatures $T_{\rm c}$ and $T_0$, compared to previous reports. Moreover, in our numerous attempts, we found this technique to be scalable and repeatable.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CeRh2As2

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0.22Pressure not reportedunknown
CeRh2As2

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.305Pressure not reportedunknown
CeRh2As2

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.318Pressure not reportedunknown
CeRh2As2

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.33Pressure not reportedunknown
CeRh2As2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.305Pressure not reportedunknown
CeRh2As2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.318Pressure not reportedunknown
CeRh2As2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.33Pressure not reportedunknown

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