Unconventional superconducting diode effects via antisymmetry and antisymmetry breaking
Chong Li, Yang-Yang Lyu, Wen-Cheng Yue, Peiyuan Huang, Haojie Li, Tianyu Li, Chen-Guang Wang, Zixiong Yuan, Ying Dong, Xiaoyu Ma, Xuecou Tu, Tao Tao, Sining Dong, Liang He, Xiaoqing Jia, Guozhu Sun, Lin Kang, Huabing Wang, Francois M. Peeters, Milorad V. Milošević, Peiheng Wu, Yong-Lei Wang
arXiv:2404.08405 · DOI 10.1021/acs.nanolett.3c05008 · 2024-04-12 · Nano letters
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Abstract
Symmetry-breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon of superconducting diode effect. However, generating and precisely controlling the superconducting diode effect poses significant challenges. Here, we take a novel route with deliberate manipulation of magnetic charge potentials to realize unconventional superconducting flux-quantum diode effects. We achieve this through suitably tailored nanoengineered arrays of nanobar magnets on top of a superconducting thin film. We demonstrate the vital roles of inversion antisymmetry and its breaking in evoking unconventional superconducting effects-a magnetically symmetric diode effect and an odd-parity magnetotransport effect. These effects are non-volatilely controllable through in-situ magnetization switching of the nanobar magnets. Our findings promote the use of antisymmetry (breaking) for initiating unconventional superconducting properties, paving the way for exciting prospects and innovative functionalities in superconducting electronics.
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