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Superconductivity in three-dimensional interacting doped topological insulators

Andras L. Szabo, Bitan Roy

arXiv:2407.08736 · DOI 10.1103/PhysRevB.110.L201301 · 2024-07-11 · Physical Review B

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Abstract

Three-dimensional doped Dirac insulators foster simply connected (in both topological and trivial regimes) and annular (deep inside the topological regime) Fermi surfaces (FSs) in the normal state, and allow on-site repulsions among fermions with opposite spin ($U_1$) and parity ($U_2$) eigenvalues. From an unbiased leading-order (one-loop) renormalization group analysis, controlled by a suitable $ε$ expansion, we show that this system develops a strong propensity toward the nucleation of scalar $s$-wave and odd-parity pseudoscalar $p$-wave pairings, favored by repulsive $U_1$ and $U_2$ interactions, respectively, irrespective of the underlying FS topology. Our results can be pertinent for the observed superconductivity in various doped narrow gap semiconductors, and the theoretical foundation can readily be applied to investigate similar phenomenon in various doped topological materials.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CuxBi2Se3

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—Pressure not reportedunknown
NdxBi2Se3

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—Pressure not reportedunknown
SrxBi2Se3

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—Pressure not reportedunknown
Sn1-xInxTe

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—Pressure not reportedunknown

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