Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te)

Abstract

Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co)$_2$As$_2$, Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density $J_\mathrm{c}$ on misorientation angle ($θ_\mathrm{GB}$) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO$_2$-buffered symmetric [010]-tilt roof-type SrTiO$_3$ bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that $θ_\mathrm{GB}$ of Fe(Se,Te) was smaller whereas $θ_\mathrm{GB}$ of CeO$_2$ was larger than that of the substrate. The difference in $θ_\mathrm{GB}$ between the CeO$_2$ buffer layer and the substrate is getting larger with increasing $θ_\mathrm{GB}$. For $θ_\mathrm{GB}\geq24^\circ$ of the substrates, $θ_\mathrm{GB}$ of Fe(Se,Te) was zero, whereas $θ_\mathrm{GB}$ of CeO$_2$ was continuously increasing. The inclined growth of CeO$_2$ can be explained by the geometrical coherency model. The $c$-axis growth of Fe(Se,Te) for $θ_\mathrm{GB}\geq24^\circ$ of the substrates is due to the domain matching epitaxy on (221) planes of CeO$_2$. Electrical transport measurements confirmed no reduction of inter-grain $J_\mathrm{c}$ for $θ_\mathrm{GB}\leq9^\circ$, indicative of strong coupling between the grains.

Source-reported materials — not catalogue approval

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