Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
W. Pan, K. R. Sapkota, P. Lu, A. J. Muhowski, W. M. Martinez, C. L. H. Sovinec, R. Reyna, J. P. Mendez, D. Mamaluy, S. D. Hawkins, J. F. Klem, L. S. L. Smith, D. A. Temple, Z. Enderson, Z. Jiang, E. Rossi
arXiv:2410.06085 · DOI 10.1016/j.mseb.2025.118285 · 2024-10-08 · Materials Science and Engineering: B
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Abstract
In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $μ\sim 1.0 \times 10^6$ cm$^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.3 | Pressure not reported | unknown |
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