4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

N. A. Vovk; G. A. Matveev; M. A. Mumlyakov; M. V. Shibalov; I. A. Filippov; I. D. Burkov; S. D. Perov; N. V. Porohov; N. N. Osipov; M. A. Tarkhov

4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

N. A. Vovk, G. A. Matveev, M. A. Mumlyakov, M. V. Shibalov, I. A. Filippov, I. D. Burkov, S. D. Perov, N. V. Porohov, N. N. Osipov, M. A. Tarkhov

arXiv:2603.01676 · 2026-03-02

T3

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si$_3$N$_4$) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).