Phase Formation and Thermal Stability of Superconducting Platinum Silicide Thin Films on Silicon
Tharanga R. Nanayakkara, Ananya Chattaraj, Mingzhao Liu, Charles T. Black
arXiv:2606.07848 · 2026-06-05
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Abstract
Platinum silicide (PtSi) thin films are promising for silicon-based superconducting quantum devices due to their compatibility with CMOS fabrication, air stability, and superconducting transition temperature near 1 K. We report a systematic study of PtSi phase formation, microstructure, and interface quality as a function of annealing temperature and duration, characterizing films using grazing-incidence X-ray diffraction, X-ray reflectivity, and electrical transport measurements. Phase-pure PtSi forms within minutes by rapid thermal processing at 600 °C and is stable under extended annealing, while 30 s anneals across 300-600 °C yield equivalent film quality with consistent microstructure and superconducting properties. X-ray reflectivity reveals that interfacial roughening is an intrinsic consequence of the Pt2Si-to-PtSi conversion step rather than a result of elevated temperature or prolonged annealing. These results establish a robust processing window for PtSi formation in silicon-based superconducting device fabrication flows.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| PtSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1 | Pressure not reported | unknown |
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