Counterintuitive inverse superconducting transition beyond 4He-cooling limit
Haowen Han, Yi Bian, Tong Ma, Yusong Zhao, Nuofu Chen, Chuanying Xi, Ze Wang, Binghui Ge, Hongliang Dong, Jia-Cai Nie, Ho-Kwang Mao, Jikun Chen
arXiv:2606.18683 · 2026-06-17
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Abstract
Thermally driven quantum-orders observed in exceptional instances may redefine the role of thermal-fluctuation from a source of decoherence to a resource for coherent-state engineering. While preliminary signs of counterintuitive temperature-rise-triggered superconductivity manifested in CeCu2Si2, ErRh4B4, Ho1.2Mo6S8 and (La,Ce)Al2, their critical-temperatures (Tc-inv) remain below Kelvin-range, precluding substantial applications. Here, we report field-modulated inverse-superconducting-transitions above 4He-cooling-limit in Eu-based infinite-layer nickelates (EuxNd1-xNiO2 and EuxPr1-xNiO2) grown on a substrate under both overdoped and underdoped regimes. Paradigmatically, superconductivity with zero-resistance is confined between Tc-inv (2.6-5.4 K) and another higher normal-Tc, rising and decreasing with applied magnetic-field, respectively. Starting from the resistive-state below Tc-inv, the inverse-superconducting-transition is driven by not only temperature-rising, but also current-density, while superconductivity further vanishes at higher temperature and current thresholds. The Kelvin-range inverse superconducting transition is plausibly explained by temperature-induced alternating dominance of effective magnetic-fields arising from Eu2+4f7 related compensations relative to the upper-critical-field. Furthermore, an extended-phenomenological-framework is also supported by reemerged superconductivity below 300 mK under magnetic-field, giving rise to an unprecedented temperature-induced reentrant superconductivity. Our findings establish magnetic-interaction-reconfigured high-Tc systems as fertile platforms for exploring quantum phenomena that reverse thermal-decoherence paradigm, also enabling antithetical-designs to unlock untapped application-scenarios for quantum-phase-transition devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| EuxNd1-xNiO2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.6 | Pressure not reported | zero_resistance |
| EuxPr1-xNiO2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.6 | Pressure not reported | zero_resistance |
| CeCu2Si2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| ErRh4B4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| Ho1.2Mo6S8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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