History dependence of peak effect in CeRu$_2$ and V$_3$Si: an analogy with the random field Ising systems
Sujeet Chaudhary, A. K. Rajarajan, Kanwal Jeet Singh, S. B. Roy, P. Chaddah
arXiv:cond-mat/0001009 · DOI 10.1016/S0038-1098(00)00004-1 · 2000-01-03 · Solid State Communications
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Abstract
We present results of transport measurements showing distinct path dependence of the electrical resistance in the superconducting vortex state of single crystal samples of CeRu$_2$ and V$_3$Si. Resistance measured in the vortex state of both the systems prepared by field cooling (FC), indicates a relatively higher degree of disorder than when it is prepared by isothermal variation of field. Small oscillations of magnetic field modify the resistance in the FC state, highlighting the metastable nature of that state. An analogy is drawn with the FC state of the random-field Ising systems.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CeRu2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.1 | Pressure not reported | zero_resistance |
| V3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 16.5 | Pressure not reported | zero_resistance |
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