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Peak effect in the vortex state of V$_3$Si: a study of history dependence

Sujeet Chaudhary, A. K. Rajarajan, Kanwal Jeet Singh, S. B. Roy, P. Chaddah

arXiv:cond-mat/0011100 · DOI 10.1016/S0921-4534(00)01656-7 · 2000-11-07 · Physica C-superconductivity and Its Applications

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Abstract

We present results of transport properties measurement on a single crystal of V$_3$Si showing distinct signature of peak-effect in its vortex state. The field variation of the electrical resistance in the flux-line lattice prepared by different experimental path, namely zero field cooling (ZFC) and field cooling (FC), shows a distinct path dependence in the vicinity of the peak-effect regime. In the field cooled state, small cycling of magnetic field modifies the resistance drastically around the peak-effect regime, highlighting the metastable nature of that state in the concerned regime.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
V3Si

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15Pressure not reportedzero_resistance
V3Si

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—Pressure not reported—
CeRu2

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—Pressure not reported—
NbSe2

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—Pressure not reported—
Nb

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—Pressure not reported—
Nb3Ge

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—Pressure not reported—
Mo3Si

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—Pressure not reported—
UPd2Al3

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—Pressure not reported—

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