Evidence of two-electron tunneling interference in Nb/InAs junctions
Antonio Badolato, Francesco Giazotto, Marco Lazzarino, Pasqualantonio Pingue, Fabio Beltram, Carlo Lucheroni, Rosario Fazio
arXiv:cond-mat/0007140 · DOI 10.1103/PhysRevB.62.9831 · 2000-07-08 · Physical Review B
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Abstract
The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8 | Pressure not reported | unknown |
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