Superconducting MgB2 thin films by pulsed laser deposition
S. R. Shinde, S. B. Ogale, R. L. Greene, T. Venkatesan, P. C. Canfield, S. L. Budko, G. Lapertot, C. Petrovic
arXiv:cond-mat/0103542 · DOI 10.1063/1.1385186 · 2001-03-26 · Applied Physics Letters
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Abstract
Growth of MgB2 thin films by pulsed laser deposition is examined under ex situ and in situ processing conditions. For the ex situ process, Boron films grown by PLD were annealed at 900 C with excess Mg. For the in situ process, different approaches involving ablation from a stoichiometric target under different growth conditions, as well as multilayer deposition involving interposed Mg layers were examined and analyzed. Magnetic measurements on ex situ processed films show TC of ~39 K, while the current best in situ films show a susceptibility transition at ~ 22 K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 22 | Pressure not reported | unknown |
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