Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition
A. Brinkman, D. Mijatovic, G. Rijnders, V. Leca, H. J. H. Smilde, I. Oomen, A. A. Golubov, F. Roesthuis, S. Harkema, H. Hilgenkamp, D. H. A. Blank, H. Rogalla
arXiv:cond-mat/0103198 · DOI 10.1016/S0921-4534(01)00396-3 · 2001-03-08 · Physica C-superconductivity and Its Applications
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Abstract
Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 12 | Pressure not reported | zero_resistance |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 27 | Pressure not reported | onset |
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