Superconducting MgB2 Thin Films with Tc of about 39K Grown by Pulsed Laser Deposition
S. F. Wang, S. Y. Dai, Y. L. Zhou, Z. H. Chen, D. F. Cui, J. D. Yu, M. He, H. B. Lu, G. Z. Yang
arXiv:cond-mat/0104555 · DOI 10.1088/0256-307X/18/7/341 · 2001-04-28 · Chinese Physics Letters
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Abstract
Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of about 39K, while scanning electron microscopy and x-ray diffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | unknown |
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