Superconducting magnesium diboride films on Silicon with Tc0 about 24K grown via vacuum annealing from stoichiometric precursors
H. Y. Zhai, H. M. Christen, L. Zhang, C. Cantoni, M. Paranthaman, B. C. Sales, D. K. Christen, D. H. Lowndes
arXiv:cond-mat/0103588 · DOI 10.1063/1.1410360 · 2001-03-28 · Applied Physics Letters
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Abstract
Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performed without the requirement of Mg vapor or an Mg cap layer. This integration of superconducting MgB2 films on silicon may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy (SEM) show that the films have a uniform surface morphology and thickness. Energy dispersive spectroscopy (EDS) reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in-situ annealed films, while the use of Si as the substrate does not result in a decrease in Tc as compared to other substrates.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24 | Pressure not reported | zero_resistance |
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