In-plane Hall effect in c-axis-oriented MgB2 thin films
W. N. Kang, Hyeong-Jin Kim, Eun-Mi Choi, Heon Jung Kim, Kijoon H. P. Kim, H. S. Lee, Sung-Ik Lee
arXiv:cond-mat/0105024 · DOI 10.1103/PhysRevB.65.134508 · 2001-05-02 · Physical Review B
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Abstract
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K and then deviates from that linear T-dependence at higher temperatures. The T^2 dependence of the cotangent of the Hall angle is only observed above 130 K. The mixed-state Hall effect reveals no sign anomaly over a wide range of current densities from 10^2 to 10^4 A/cm^2 and for magnetic fields up to 5 T.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39.2 | Pressure unresolved | onset |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39.2 | Pressure unresolved | onset |
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