Charge profile of surface doped C60
Samuel Wehrli, Didier Poilblanc, T. M. Rice
arXiv:cond-mat/0106433 · DOI 10.1007/s100510170054 · 2001-06-21 · The European Physical Journal B - Condensed Matter and Complex Systems
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Abstract
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schoen, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. The charge profile behaves similarly to the case of a continuous space-charge layer, in particular it is confined to a single interface layer for doping higher than ~0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| C60 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 52 | Pressure not reported | unknown |
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