Electrical transport studies of quench condensed Bi films at the initial stage of film growth: Structural transition and the possible formation of electron droplets
M. M. Rosario, Y. Liu
arXiv:cond-mat/0110415 · DOI 10.1103/PhysRevB.65.094506 · 2001-10-19 · Physical Review B
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Abstract
The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent with previous studies. Unexpected behavior was found at the initial stage of film growth, a regime not explored in detail prior to the present work. As the temperature was lowered, a positive temperature coefficient of resistance (dR/dT > 0) emerged, with the resistance reaching a minimum before the dR/dT became negative again. This behavior was accompanied by a non-linear and asymmetric I-V characteristic. As the film became thicker, conventional variable-range hopping (VRH) was recovered. We attribute the observed crossover in the electrical transport properties to an amorphous to granular structural transition. The positive dR/dT found in the amorphous phase of Bi formed at the initial stage of film growth was qualitatively explained by the formation of metallic droplets within the electron glass.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | Pressure not reported | onset |
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