Single electron transistors with high quality superconducting niobium islands

R. Dolata; H. Scherer; A. B. Zorin; J. Niemeyer

doi:10.1063/1.1465526

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Single electron transistors with high quality superconducting niobium islands

R. Dolata, H. Scherer, A. B. Zorin, J. Niemeyer

arXiv:cond-mat/0111580 · DOI 10.1063/1.1465526 · 2001-11-30 · Applied Physics Letters

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Abstract

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and germanium, high quality niobium patterns with good superconducting properties and a gap energy of up to 2Delta = 2.5 meV for the niobium were achieved. The I(U) characteristics of the transistors show special features due to tunneling of single Cooper pairs and significant gate modulation in both the superconducting and the normal state.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	7.5	Pressure not reported	unknown
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9	Pressure not reported	unknown