Doping dependence of an n-type cuprate superconductor investigated by ARPES
N. P. Armitage, F. Ronning, D. H. Lu, C. Kim, A. Damascelli, K. M. Shen, D. L. Feng, H. Eisaki, Z. -X. Shen, P. K. Mang, N. Kaneko, M. Greven, Y. Onose, Y. Taguchi, Y. Tokura
arXiv:cond-mat/0201119 · DOI 10.1103/PhysRevLett.88.257001 · 2002-01-08 · Physical Review Letters
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Abstract
We present an angle resolved photoemission (ARPES) doping dependence study of the n-type cuprate superconductor Nd_2-xCe_xCuO_4, from the half-filled Mott-insulator to the T_c=24K superconductor. In Nd2CuO4, we reveal the charge-transfer band (CTB) for the first time. As electrons are doped into the system, this feature's intensity decreases with the concomitant formation of near-E_F spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume ~ x) centered at (pi,0). Further doping leads to the creation of a new hole-like Fermi surface (volume ~ 1+x) centered at (pi,pi). These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the n-type cuprates.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nd2-xCexCuO4±δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24 | Pressure not reported | unknown |
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