High quality MgB2 thin films in-situ grown by dc magnetron sputtering
R. Vaglio, M. G. Maglione, R. Di Capua
arXiv:cond-mat/0203322 · DOI 10.1088/0953-2048/15/8/312 · 2002-03-15 · Superconductor Science and Technology
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Abstract
Thin films of the recently discovered magnesium diboride (MgB2) intermetalic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830 C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resistivity ratio up to 1.6, a low temperature critical current density Jc > 1 MA/cm2 and anisotropic critical field with gamma = 2.5 close to the values obtained for single crystals. The preparation technique can be easily scaled to produce large area in-situ films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 35 | Pressure not reported | onset |
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