Atomic Scale Imaging and Spectroscopy of a CuO_2 Plane at the Surface of Bi_2Sr_2CaCu_2O_{8+delta}
S. Misra, S. Oh, D. J. Hornbaker, T. DiLuccio, J. N. Eckstein, A. Yazdani
arXiv:cond-mat/0208053 · DOI 10.1103/PhysRevLett.89.087002 · 2002-08-03 · Physical review letters
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Abstract
We have used a scanning tunneling microscope to demonstrate that a single CuO_2 plane can form a stable and atomically ordered layer at the surface of Bi_2Sr_2CaCu_2O_{8+delta}. In contrast to previous studies on high-T_c surfaces, the CuO_2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO_2 plane's electronic states affects the tunneling process.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 84 | Pressure not reported | unknown |
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