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Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

A. Rufenacht, P. Chappatte, S. Gariglio, Ch. Leemann, J. Fompeyrine, J. -P. Locquet, P. Martinoli

arXiv:cond-mat/0302261 · DOI 10.1016/S0038-1101(03)00191-6 · 2003-02-13 · Solid-state Electronics

T2theoretical10 citations

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Abstract

We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $λ_{ab}(0)$ = 535 nm.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La1.9Sr0.1CuO4

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12.5Pressure not reportedzero_resistance
La2-xSrxCuO4

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10Pressure not reportedzero_resistance
La2-xSrxCuO4

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35Pressure not reportedonset
La1.9Sr0.1CuO4

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10Pressure not reportedzero_resistance
La1.9Sr0.1CuO4

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35Pressure not reportedonset
La1.9Sr0.1CuO4

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8.5Pressure not reportedunknown
La1.9Sr0.1CuO4

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8.5Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

35Pressure not reportedunknown
La1.9Sr0.1CuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

25Pressure not reportedzero_resistance
La1.9Sr0.1CuO4

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5.7Pressure not reportedzero_resistance
La1.9Sr0.1CuO4

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11.3Pressure not reportedzero_resistance

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