Ion beam sputtering method for progressive reduction of nanostructures dimensions
M. Savolainen, V. Touboltsev, P. Koppinen, K. -P. Riikonen, K. Arutyunov
arXiv:cond-mat/0311383 · DOI 10.1007/s00339-004-2709-8 · 2003-11-17 · Applied Physics A
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Abstract
An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions and it was shown to be applicable multiple times to the same sample. The electrical measurements and samples imaging in between the sputtering sessions clearly indicated that the dimensions, i.e. cross-section of the nanowires and area of the tunnel junctions in SET, were progressively reduced without noticeable degradation of the sample structure. We were able to reduce the effective diameter of aluminum nanowires from ~65 nm down to ~30 nm, whereas the tunnel junction area has been reduced by 40 %.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.285 | Pressure unresolved | unknown |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.316 | Pressure unresolved | unknown |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.371 | Pressure unresolved | unknown |
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