A possible scenario of metallization in boron doped diamond CB$_x$
Yu. G. Pogorelov, V. M. Loktev
arXiv:cond-mat/0405040 · DOI 10.1103/PhysRevB.72.075213 · 2004-05-03
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Abstract
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor states, localized on pairs of neighbor dopants (impurity "dumbbells"), in order to describe boron doped diamond CB$_x$. The resulting parameters of band structure, in particular, position of the Fermi level, are compared to the recent experimental data on metallized and superconducting CB$_x$.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CBx Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.3 | Pressure not reported | unknown |
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