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Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films

Etienne Bustarret, Jozef Kacmarcik, Christophe Marcenat, Etienne Gheeraert, Catherine Cytermann, Jacques Marcus, Thierry Klein

arXiv:cond-mat/0408517 · DOI 10.1103/PhysRevLett.93.237005 · 2004-08-24 · Physical review letters

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Abstract

Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity is about 5-7 10^20 /cm3, close to the metal-insulator transition. The H-T phase diagram has been obtained from transport and a.c. susceptibility measurements down to 300mK. These results bring new quantitative constraints on the theoretical models proposed for superconductivity in diamond.

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FormulaReported Tc (K)Pressure (GPa)Type
MgB2

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40Pressure not reportedunknown

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