Controlling the Intrinsic Josephson Junction Number in a $\mathbf{Bi_2Sr_2CaCu_2O_{8+δ}}$ Mesa
Li-Xing You, Pei-Heng Wu, Wei-Wei Xu, Zheng-Ming Ji, Lin Kang
arXiv:cond-mat/0406623 · DOI 10.1143/JJAP.43.4163 · 2004-06-25 · Japanese Journal of Applied Physics
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Abstract
In fabricating $\mathrm{Bi_2Sr_2CaCu_2O_{8+δ}}$ intrinsic Josephson junctions in 4-terminal mesa structures, we modify the conventional fabrication process by markedly reducing the etching rates of argon ion milling. As a result, the junction number in a stack can be controlled quite satisfactorily as long as we carefully adjust those factors such as the etching time and the thickness of the evaporated layers. The error in the junction number is within $\pm 1$. By additional ion etching if necessary, we can controllably decrease the junction number to a rather small value, and even a single intrinsic Josephson junction can be produced.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 90 | Pressure not reported | unknown |
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