← Back to search

Low-Temperature Hall Effect in Substituted Sr2RuO4

N. Kikugawa, A. P. Mackenzie, C. Bergemann, Y. Maeno

arXiv:cond-mat/0408312 · DOI 10.1103/PhysRevB.70.174501 · 2004-08-13 · Physical Review B

T322 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr^(2+) has been substituted by La^(3+) (Sr(2-y)La(y)RuO(4)) or Ru^(4+) by Ti^(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be measured for fields above 4 T. The conventional weak-field Hall coefficient as a function of doping shows a sharp jump and sign change at y ~ 0.01 that is unrelated to either a sharp change in Fermi-surface topography or a magnetic instability. The implications of these results are discussed.

Similar papers