Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor
Dawei Wang, Jia G. Lu
arXiv:cond-mat/0410351 · DOI 10.1063/1.1850331 · 2004-10-14 · Journal of Applied Physics
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Abstract
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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