Heating-compensated constant-temperature tunneling measurements on stacks of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ intrinsic junctions
Myung-Ho Bae, Jae-Hyun Choi, Hu-Jong Lee
arXiv:cond-mat/0501209 · DOI 10.1063/1.1940731 · 2005-01-10 · Applied Physics Letters
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Abstract
In highly anisotropic layered cuprates such as Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ tunneling measurements on a stack of intrinsic junctions in a high-bias range are often susceptible to self-heating. In this study we monitored the temperature variation of a stack ("sample stack") of intrinsic junctions by measuring the resistance change of a nearby stack ("thermometer stack") of intrinsic junctions, which was strongly thermal-coupled to the sample stack through a common Au electrode. We then adopted a proportional-integral-derivative scheme incorporated with a substrate-holder heater to compensate the temperature variation. This in-situ temperature monitoring and controlling technique allows one to get rid of spurious tunneling effects arising from the self-heating in a high bias range.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8+x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 85.8 | Pressure not reported | unknown |
| Bi2Sr2CaCu2O8+x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 90.3 | Pressure not reported | unknown |
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