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de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2

A. Carrington, J. D. Fletcher, J. R. Cooper, O. J. Taylor, L. Balicas, N. D. Zhigadlo, S. M. Kazakov, J. Karpinski, J. P. H. Charmant, J. Kortus

arXiv:cond-mat/0504664 · DOI 10.1103/PhysRevB.72.060507 · 2005-04-26 · Physical Review B

T2theoretical17 citations

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Abstract

We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger $σ$ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant $λ$. These observations are compared with band structure calculations, and found to be in excellent agreement.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
MgB2

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39Pressure unresolvedunknown
MgB2

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38.3Pressure unresolvedonset
MgB2

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—Pressure unresolvedunknown
Mg0.926Al0.074B2

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33.6Pressure unresolvedonset
Mg0.926Al0.074B2

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33.6Pressure unresolvedonset
Mg0.921Al0.079B2

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34.4Pressure unresolvedonset
Mg(B0.97C0.03)2

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35.7Pressure unresolvedunknown
Mg(B0.96C0.04)2

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34.5Pressure unresolvedunknown

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