Crossed Andreev reflection-induced magnetoresistance
F. Giazotto, F. Taddei, R. Fazio, F. Beltram
arXiv:cond-mat/0512090 · DOI 10.1103/PhysRevLett.97.087001 · 2005-12-05 · Physical review letters
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Abstract
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
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