An ultra sensitive radio frequency single electron transistor working up to 4.2 K
Henrik Brenning, Sergey Kafanov, Tim Duty, Sergey Kubatkin, Per Delsing
arXiv:cond-mat/0602518 · DOI 10.1063/1.2388134 · 2006-02-22 · Journal of Applied Physics
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Abstract
We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 microlectrons/sqrt(Hz) in the superconducting and normal state respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures: 40 mK, 1.8 K and 4.2 K.
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