MgB2 tunnel junctions with native or thermal oxide barriers
R. K. Singh, R. Gandikota, J. Kim, N. Newman, J. M. Rowell
arXiv:cond-mat/0604229 · DOI 10.1063/1.2226546 · 2006-04-09 · Bulletin of the American Physical Society
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Abstract
MgB2 tunnel junctions (MgB2/barrier/MgB2) were fabricated using a native oxide grown on the bottom MgB2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300oC, even over junction areas of ~1 mm2. Studies of such junctions, and those of the type MgB2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB2 exhibit a wide range of barrier heights and widths.
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