Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method
S. Chromik, J. Huran, V. Strbik, M. Spankova, I. Vavra, W. Bohne, J. Rohrich, E. Strub, P. Kovac, S. Stancek
arXiv:cond-mat/0507519 · DOI 10.1088/0953-2048/19/6/027 · 2005-07-22 · Superconductor Science and Technology
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Abstract
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37 | Pressure not reported | zero_resistance |
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