Probe to properties of MgB2 thick film on silicon carbide substrate
Fen Li, Tao Guo, Kaicheng Zhang, Li-ping Chen, Chinping Chen, Qing-rong Feng
arXiv:cond-mat/0608549 · DOI 10.1088/0953-2048/19/10/015 · 2006-08-25 · Superconductor Science and Technology
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Abstract
We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature TC above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density JC, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA/cm2 in self field at 10 K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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