Properties of MgB2 Films Grown at Various Temperatures by Hybrid Physical-Chemical Vapour Deposition
K. Chen, M. Veldhorst, C. H. Lee, D. R. Lamborn, R. DeFrain, J. M. Redwing, Q. Li, X. X. Li
arXiv:1112.4044 · DOI 10.1088/0953-2048/21/9/095015 · 2011-12-17 · Superconductor Science and Technology
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Abstract
A Hybrid Physical-Chemical Vapour Deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 C with a Tc0 of 35.5 K. MgB2 films up to 4 um in thickness grown at 550 C have Jc over 10E6 A/cm2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 35.5 | Pressure not reported | zero_resistance |
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