Correlation effects in the density of states of annealed GaMnAs
S. Russo, T. M. Klapwijk, W. Schoch, W. Limmer
arXiv:cond-mat/0605753 · DOI 10.1103/PhysRevB.75.033308 · 2006-05-31 · Physical Review B
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Abstract
We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaMnAs. Our experiment shows that low temperature annealing is a direct empirical tool that modifies the correlation gap and thus the electron-electron interaction. Consistent with previous results on boron-doped silicon we find, as a function of voltage, a transition across the phase boundary delimiting the direct and exchange correlation regime.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbTiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 15 | Pressure not reported | unknown |
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